The joint team of Professor Wang Xingjun, Professor Peng Chao, and Researcher Shu Haowen from the School of Electronics at Peking University has made a breakthrough in the field of ultra high-speed pure silicon modulators, achieving the world's first pure silicon modulator with an electro-optic bandwidth of 110GHz. This is the first time that Intel has increased the bandwidth of pure silicon modulators to over 100GHz internationally since reporting its first 1GHz silicon modulator in the journal Nature in 2004. Recently, the relevant research results were published online under the title of "110GHz Bandwidth Slow Light Silicon Modulators" in "Science Progress". This pure silicon modulator combines ultra-high bandwidth, ultra small size, ultra large passband, and complementary metal oxide semiconductor (CMOS) The advantages of integrated process compatibility meet the demands of future ultra high speed application scenarios for ultra high speed, high integration, multi wavelength communication, high thermal stability, and wafer level production. It is a major breakthrough in the field of silicon based optoelectronics and provides important key technical support for the application of high-speed, short distance data centers and optical communication. It is of great significance for the development of the next generation of data centers Introduction by Wang Xingjun. With the large-scale application of new generation information technologies such as artificial intelligence, big data, and cloud computing, the total amount of global data is increasing exponentially. Optoelectronic integration technology represented by silicon based optoelectronics has become an important development trend in optical communication systems. In silicon based optoelectronic chip systems, silicon based modulators can achieve the functional conversion of electrical signals to optical signals, with advantages such as low cost, high integration, and compatibility with CMOS integration processes A key active device for completing on-chip information transmission and processing Wang Xingjun stated that due to the slow carrier transport rate of silicon materials themselves, the typical bandwidth of pure silicon modulators is generally 30 to 40GHz, making it difficult to adapt to future communication rates exceeding 100Gbaud, thus becoming one of the bottlenecks in the development of silicon based optoelectronics in the high-speed field. In this work, the research team addressed the bandwidth limitation issue of traditional silicon-based modulators and utilized the silicon-based coupled resonant cavity optical waveguide structure to introduce slow light effects. A complete theoretical model of silicon-based slow light modulators was constructed. By adjusting structural parameters reasonably to comprehensively balance optical and electrical indicators, deep optimization of modulator performance was achieved. The research team designed and prepared an ultra-high bandwidth silicon based slow light modulator operating at a communication wavelength of around 1550 nanometers in a pure silicon material system based on a silicon based optoelectronic standard process compatible with CMOS integrated technology, achieving an ultra-high electro-optical bandwidth of 110GHz, breaking the bandwidth limit of pure silicon modulators to date, and reducing the modulation arm size to the order of one hundred micrometers, Without the need for digital signal processing, a simple binary amplitude keying modulation format is used to achieve high-speed signal transmission of over 110Gbps in a single channel, reducing algorithm costs and signal delay, while maintaining high uniformity of multi wavelength communication performance within a super wide optical passband of up to 8 nanometers. The research team has achieved a leap in the bandwidth performance of silicon based modulators without introducing heterogeneous materials and complex processes. In the future, low-cost wafer level mass production can also be achieved, demonstrating the enormous value of silicon based optoelectronics in the next generation of ultra high speed applications, "said Wang Xingjun.