On the 12th, the reporter learned from the University of Science and Technology of China that at the 68th International Conference on Electronic Devices (IEEE IEDM) held in San Francisco, the other day, two research papers on gallium oxide devices (high power gallium oxide schottky diodes and gallium oxide photodetectors) were received by Professor Long Shibing's research group of the National Demonstration Microelectronics Institute of the University of Science and Technology of China. IEEE IEDM is an annual academic conference on microelectronics and nanoelectronics. It is the world's top forum for reporting key technological breakthroughs in the fields of semiconductor and electronic device technology, design, manufacturing, physics and modeling. Together with ISSCC and VLSI, IEEE IEDM is called the "Olympic Grand Meeting" in the field of integrated circuits and semiconductors. How to develop an effective edge termination structure to alleviate the edge electric field of the Schottky electrode is a research focus of GaO Schottky diodes. Because the P-type doping of gallium oxide has not been solved yet, the edge terminal structure related to PN junction has always been a difficulty. Long Shibing's research group successfully applied the heterojunction terminal extension structure to GaO Schottky diode based on the previous research of GaO heteroPN junction. In this study, the charge concentration in JTE region is optimized through reasonable design to ensure that the forward characteristics of the diode are not affected while the Schottky edge electric field is minimized, so as to effectively improve the withstand voltage of the device. The optimized device achieves a low on resistance of 2.9m Ω· cm ^ 2 and a high breakdown voltage of 2.1kV, and its power quality factor is as high as 1.52GW/cm ^ 2. In addition, a large area GaO Schottky diode has been successfully fabricated and packaged by using the optimized process. The current density of the device reaches 180A/cm ^ 2 at 2V forward bias voltage, and the reverse breakdown voltage reaches 1.3kV. Photodetectors are playing an increasingly important role in many fields, such as target tracking, environmental monitoring, optical communication, deep space exploration, etc. Responsiveness and response speed are the two key performance parameters of photodetector, but there is a restrictive relationship between these two indicators, and one is offset by the other. Long Shibing's team alleviated the above constraints by introducing additional auxiliary light sources to achieve the OPG control scheme. In this work, a strategy that tens of millions of pixels share an auxiliary LED in the photodetector chip can ease the restriction between responsiveness and response speed, which has important reference significance for improving the overall performance of the photodetector chip. (Reporter Wu Changfeng) (News Agency)