On the 26th, the reporter learned from the University of Science and Technology of China that the research group of Professor Long Shibing of the School of Microelectronics of the University, in conjunction with the processing platform of the Suzhou Institute of Nanotechnology of the Chinese Academy of Sciences, has developed the GaO vertical slot gate field effect transistor for the first time using oxygen atmosphere annealing and nitrogen ion implantation technology. The relevant research results were published online in Applied Physics Communication and IEEE Electronic Equipment Communication. As a new generation of power semiconductor materials, the p-type doping of GaO has not yet been solved. GaO field-effect transistors are faced with problems such as difficulty in realizing enhanced mode and improving power quality factor. Therefore, it is urgent to design a new structure GaO vertical transistor. The current barrier layer of the device was prepared by oxygen atmosphere annealing and nitrogen ion implantation, and the GaO vertical groove field effect transistor structure without P-type doping technology was developed by combining with the gate groove etching process. The current barrier layer formed by oxygen atmosphere annealing and nitrogen ion implantation can effectively isolate the current path between the transistor source and drain. When a positive gate voltage is applied, a conductive channel for electron accumulation will be formed on the side wall of the gate slot to realize current control. Similar to that silicon can form a high-resistance surface layer after annealing in oxygen atmosphere, gallium oxide using this method to prepare current barrier layer has the characteristics of less defects, no diffusion and low cost. The breakdown voltage of the device can reach 534 volts, which is the highest value of current barrier type gallium oxide MOSFET (metal oxide semiconductor field effect transistor) devices at present, and the power quality factor exceeds the theoretical limit of silicon monopole devices. Researchers said that these two works have found new technical routes and structural solutions for GaO transistors. (Xinhua News Agency)
Edit：He Chuanning Responsible editor：Su Suiyue
Source：Sci-Tech Daily
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